Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

Electrical Performances of AlInN/GaN HEMTs. A Comparison with AlGaN/GaN HEMTs with similar technological process

a comparison of teachers and supervisors, with respect to teacher efficacy and reflection

supervisors play an undeniable role in training teachers, before starting their professional experience by preparing them, at the initial years of their teaching by checking their work within the proper framework, and later on during their teaching by assessing their progress. but surprisingly, exploring their attributes, professional demands, and qualifications has remained a neglected theme i...

Degradation Mechanisms of GaN HFETs: Comparison With GaAs Based HEMTs

Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems to be the most promising. While GaN device and circuit technology is poised to break out in the commercial arena...

ELECTRICAL CHARACTERIZATION OF AlGaN/GaN HEMTs ON Si SUBSTRATE

Deep traps in AlGaN/GaN high electron mobility transistors on silicon substrate were characterized by the means of current-voltage and Deep Level Transient Spectroscopy (DLTS). DLTS measurements have revealed only hole-trap with an activation energy of 0.82eV. The nature and the localization of this trap are discussed here.

atedA GaN/GaN HEMTs

Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEMT devices. One circuit was designed for operation at 2.0 GHz and achieved a power-added-efficiency of 50%, 38 dBm output power, and 6.2 W/mm power density. A second circuit was designed at 2.8 GHz and achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density.